Assessment of quantum dot infrared photodetectors for high temperature operation

Investigation of the performance of quantum dot infrared photodetectors QDIPs in comparison to other types of infrared photodetectors operated near room temperature is presented. The model is based on fundamental performance limitations enabling a direct comparison between different infrared material technologies. It is assumed that the performance is due to thermal generation in the active region. Theoretical estimations provide evidence that the QDIP is suitable for noncryogenic operation especially in long-wavelength infrared region, where conventional HgCdTe photodiodes are not viable. Hence it is expected that improvement in technology and design of QDIP detectors will make it useful for practical application. The higher operating speed of QDIP and multispectral capability are considerable advantages in comparison with thermal detectors. Comparison of theoretically predicted and experimental data indicates that, as so far, the QDIP devices have not demonstrated their potential advantages and are expected to posses the fundamental ability to achieve higher detector performance. Poor QDIP performance is generally linked to nonoptimal band structure and control over the QDs size and density. © 2008 American Institute of Physics. DOI: 10.1063/1.2968128